Prepare Intel Flash Memory 1,000 Times More Toned

Intel announced the type of non-volatile storage newest claimed speed 1,000 times faster than flash memory available today. Memory is named 3D Xpoint (cross point).
Working closely with Micron semiconductor company, Intel said the new memory type is now being produced and will be used in laptops, or smartphones in the future.
KompasTekno quoted from Android Authority, on Wednesday (28/07/2015), 3d Xpoint targeted separately replace non-volatile memory, such as NAND flash which is currently used in many smartphones.
NAND flash memory is different from working with traditional transistor that must be accessed through the whole row, 3d Xpoint work with transistors that accumulate with each transverse arrangement (crosshatch).

Intel Designs transistor cell preparation crosshatch models made by IntelWith the preparation of such transistors, Intel claims each transistor cell can be accessed one-on-one while writing or reading data, instead of reading the whole sequence of cells first.
That's why the process of writing and reading of data in storage standard Xpoint 3d claimed could be done more quickly, even 1,000 times faster than current flash memory.
In addition, the design of a "basket" developed by Intel that allows them to accumulate layer 10 times denser than before.
That is, the storage capacity will grow much larger without impact to measure the dimensions of the chip.
"Non-volatile memory of this new class is a form of technological revolution that Makes it possible fast access to large amounts of data, in addition to providing opportunities for new applications," said Mark Adams, president of Micron.
Currently, Intel and Micron will manufacture dual-layer chip that can store data for 128 Gigabit (16 GB), memory capacity much carried an average of today's smartphones.
Going forward, a model with greater capacity will be introduced both.